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We present a rapid liquid metal printing process (CLMP) enabling fabrication of high-mobility metal oxide semiconducting channels in less than 3 seconds. We use this process to engineer heterostructure TFTs with channels consisting of 3 nm layers of In2O3 and Ga2O3 with improved subthreshold slope and enhanced on-state performance (uave∼14cm2/Vs) . We report the influence of deposition temperature and speed, investigating crystallinity and grain morphology of this class of 2D oxide semiconductors.more » « less
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